IRF5210STRLPBF
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Specification
封装 | TO-252-3 |
Vds-漏源极击穿电压 | 100 V |
长度 | 6.5 mm |
Rds On-漏源导通电阻 | 60 mOhms |
Pd-功率耗散 | 3.8 W |
Id-连续漏极电流 | 40 A |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
宽度 | 6.22 mm |
Qg-栅极电荷 | 120 nC |
高度 | 2.3 mm |
工作温度范围 | -55°C~150°C(TJ) |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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