IRF530NSTRLPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 17 A |
Rds On - Drain-Source On-Resistance | 90 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 37 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Fall time | 25 ns |
Forward transconductance - minimum | 12 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 3.8 W |
Rise Time | 22 ns |
Factory packing quantity | 800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 35 ns |
Typical turn-on delay time | 9.2 ns |
Width | 6.22 mm |
Unit weight | 4 g |
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