IRF540NSTRLPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 33 A |
Rds On - Drain-Source On-Resistance | 44 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 47.3 nC |
Configuration | Single |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 3.8 W |
Factory packing quantity | 800 |
Transistor type | 1 N-Channel |
Width | 9.25 mm |
Unit weight | 4 g |
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