IRF5803TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSOP-6 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 40 V |
Id - continuous drain current | - 3.4 A |
Rds On - Drain-Source On-Resistance | 190 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 25 nC |
Configuration | Single |
Height | 1.1 mm |
Length | 3 mm |
Pd - Power Dissipation | 1.3 W |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Width | 1.5 mm |
Unit weight | 20 mg |
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