IRF60B217
In stock
- IRF60B217 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 60 A |
Rds On - Drain-Source On-Resistance | 7.3 mOhms |
Vgs th - gate-source threshold voltage | 2.1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 44 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 20 ns |
Forward transconductance - minimum | 150 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 83 W |
Rise Time | 37 ns |
Factory packing quantity | 1000 |
Typical shutdown delay time | 24 ns |
Typical turn-on delay time | 8.3 ns |
Width | 4.4 mm |
Unit weight | 2.300 g |
Others include "IRF60B217" parts
The following parts include 'IRF60B217'
IRF60B217 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF60B217
Infineon
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
Learn More >
-
-
-
IRF60B217
Infineon
通孔 N 通道 60V 60A(Tc) 83W(Tc) TO-220AB
Learn More >
-
- View All Newest Products from Omron