IRF6620TRPBF
In stock
- IRF6620TRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-MX |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 27 A |
Rds On - Drain-Source On-Resistance | 3.6 mOhms |
Vgs th - gate-source threshold voltage | 2.45 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 28 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 6.6 ns |
Forward transconductance - minimum | 110 S |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 89 W |
Rise Time | 80 ns |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 20 ns |
Typical turn-on delay time | 18 ns |
Width | 5.05 mm |
Others include "IRF6620TRPBF" parts
The following parts include 'IRF6620TRPBF'
IRF6620TRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF6620TRPBF
Analog Devices Inc
Learn More >
-
-
-
IRF6620TRPBF
Infineon
Learn More >
-
-
-
IRF6620TRPBF
Infineon
Learn More >
-
- View All Newest Products from Omron