IRF6662TRPBF
Manufacturer:
Mfr. Part #:
IRF6662TRPBF
Allchips #:
R001-IRF6662TRPBF-1-H-2139-X-Y
Description:
Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-MZ |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 8.3 A |
Rds On - Drain-Source On-Resistance | 17.5 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 22 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Dual Source |
Channel mode | Enhancement |
Fall time | 5.9 ns |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 89 W |
Rise Time | 7.5 ns |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 24 ns |
Typical turn-on delay time | 11 ns |
Width | 5.05 mm |
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