IRF6674TRPBF
In stock
- IRF6674TRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-MZ |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 67 A |
Rds On - Drain-Source On-Resistance | 9 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 24 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Dual Source |
Channel mode | Enhancement |
Fall time | 8.7 ns |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 89 W |
Rise Time | 12 ns |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 12 ns |
Typical turn-on delay time | 7 ns |
Width | 5.05 mm |
Others include "IRF6674TRPBF" parts
The following parts include 'IRF6674TRPBF'
IRF6674TRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF6674TRPBF
Infineon
N沟道,60V,13.4A,11mΩ@10V
Learn More >
-
-
-
IRF6674TRPBF
Infineon
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
Learn More >
-
-
-
IRF6674TRPBF
Infineon
Trans MOSFET N-CH Si 60V 13.4A 7-Pin Direct-FET MZ T/R
Learn More >
-
- View All Newest Products from Omron