IRF6717MTRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-MX |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 220 A |
Rds On - Drain-Source On-Resistance | 1.6 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 46 nC |
Configuration | Single |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 96 W |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Width | 5.05 mm |
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