IRF7329TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 2 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 12 V |
Id - continuous drain current | - 9.2 A |
Rds On - Drain-Source On-Resistance | 17 mOhms |
Vgs th - gate-source threshold voltage | - 0.9 V |
Qg - gate charge | 57 nC |
The maximum working temperature | + 150 C |
Configuration | Dual |
Fall time | 260 ns |
Forward transconductance - minimum | 25 S |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2 W |
Rise Time | 8.6 ns |
Factory packing quantity | 4000 |
Transistor type | 2 P-Channel |
Width | 3.9 mm |
Unit weight | 540 mg |
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