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IRF7341GTRPBF
Manufacturer:
Mfr. Part #:
IRF7341GTRPBF
Allchips #:
R001-IRF7341GTRPBF-1-H-0000-X-N
Description:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SO-8 |
| Number of channels | 2 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V, 55 V |
| Id - continuous drain current | 5.1 A, 5.1 A |
| Rds On - Drain-Source On-Resistance | 65 mOhms, 65 mOhms |
| Vgs th - gate-source threshold voltage | 1 V, 1 V |
| Vgs - gate-source voltage | 20 V, 20 V |
| Qg - gate charge | 29 nC, 29 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Dual |
| Channel mode | Enhancement |
| Fall time | 12.5 ns, 12.5 ns |
| Forward transconductance - minimum | 10.4 S, 10.4 S |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Pd - Power Dissipation | 2.4 W |
| Rise Time | 7.7 ns, 7.7 ns |
| Factory packing quantity | 4000 |
| Transistor type | 2 N-Channel |
| Typical shutdown delay time | 31 ns, 31 ns |
| Typical turn-on delay time | 9.2 ns, 9.2 ns |
| Width | 3.9 mm |
| Unit weight | 506.600 mg |
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