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IRF7342PBF
Manufacturer:
Mfr. Part #:
IRF7342PBF
Allchips #:
R001-IRF7342PBF-1-H-19+-X-Y
Description:
MOSFET - 阵列 2 个 P 沟道（双） 55V 3.4A 2W 表面贴装型 8-SO
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SO-8 |
| Number of channels | 2 Channel |
| Transistor polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 55 V |
| Id - continuous drain current | - 3.4 A |
| Rds On - Drain-Source On-Resistance | 105 mOhms |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 26 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Dual |
| Channel mode | Enhancement |
| Fall time | 22 ns |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Pd - Power Dissipation | 2 W |
| Rise Time | 10 ns |
| Factory packing quantity | 95 |
| Transistor type | 2 P-Channel |
| Types | Power MOSFET |
| Typical shutdown delay time | 43 ns |
| Typical turn-on delay time | 14 ns |
| Width | 3.9 mm |
| Unit weight | 540 mg |
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