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IRF7343PBF
Manufacturer:
Mfr. Part #:
IRF7343PBF
Allchips #:
Z001-IRF7343PBF-1-H-0000-X-N
Description:
MOSFET 55V DUAL N / P CH 20V VGS 55V BVDSS
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SO-8 |
| Number of channels | 2 Channel |
| Transistor polarity | N-Channel, P-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - continuous drain current | 4.7 A |
| Rds On - Drain-Source On-Resistance | 65 mOhms |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 24 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Dual Dual Drain |
| Channel mode | Enhancement |
| Fall time | 13 ns, 22 ns |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Pd - Power Dissipation | 2 W |
| Rise Time | 3.2 ns, 10 ns |
| Factory packing quantity | 95 |
| Transistor type | 1 N-Channel, 1 P-Channel |
| Types | Power MOSFET |
| Typical shutdown delay time | 32 ns, 43 ns |
| Typical turn-on delay time | 8.3 ns, 14 ns |
| Width | 3.9 mm |
| Unit weight | 540 mg |
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