IRF7507TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | Micro-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V, - 20 V |
Id - continuous drain current | 2.4 A, - 1.7 A |
Rds On - Drain-Source On-Resistance | 135 mOhms, 270 mOhms |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 5.3 nC |
Configuration | Dual |
Height | 1.11 mm |
Length | 3 mm |
Pd - Power Dissipation | 1.25 W |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel, 1 P-Channel |
Width | 3 mm |
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