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IRF7509TRPBF
Manufacturer:
Mfr. Part #:
IRF7509TRPBF
Allchips #:
R001-IRF7509TRPBF-1-H-0000-X-N
Description:
N+P沟道,30V,2.7A+2A
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | Micro-8 |
| Number of channels | 2 Channel |
| Transistor polarity | N-Channel, P-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - continuous drain current | 2.7 A |
| Rds On - Drain-Source On-Resistance | 200 mOhms |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 7.8 nC, 7.5 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Dual |
| Channel mode | Enhancement |
| Fall time | 5.3 ns, 9.3 ns |
| Forward transconductance - minimum | 1.9 S, 0.92 S |
| Height | 1.11 mm |
| Length | 3 mm |
| Pd - Power Dissipation | 1.25 W |
| Rise Time | 10 ns, 12 ns |
| Transistor type | 1 N-Channel, 1 P-Channel |
| Typical shutdown delay time | 12 ns, 19 ns |
| Typical turn-on delay time | 4.7 ns, 9.7 ns |
| Width | 3 mm |
| Unit weight | 25.540 mg |
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