IRF7606TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | Micro-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 3.6 A |
Rds On - Drain-Source On-Resistance | 90 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 20 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 39 ns |
Forward transconductance - minimum | 2.3 S |
Height | 1.11 mm |
Length | 3 mm |
Pd - Power Dissipation | 1.8 W |
Rise Time | 20 ns |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 43 ns |
Typical turn-on delay time | 13 ns |
Width | 3 mm |
Unit weight | 25.540 mg |
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