IRF7759L2TRPBF
In stock
- IRF7759L2TRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-L8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 75 V |
Id - continuous drain current | 160 A |
Rds On - Drain-Source On-Resistance | 1.8 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 200 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Octal Source Hex Drain |
Channel mode | Enhancement |
Fall time | 33 ns |
Height | 0.74 mm |
Length | 9.15 mm |
Pd - Power Dissipation | 125 W |
Rise Time | 87 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 80 ns |
Typical turn-on delay time | 18 ns |
Width | 7.1 mm |
Others include "IRF7759L2TRPBF" parts
The following parts include 'IRF7759L2TRPBF'
IRF7759L2TRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF7759L2TRPBF
Analog Devices Inc
Learn More >
-
-
-
IRF7759L2TRPBF
Infineon
N沟道 75V 26A
Learn More >
-
- View All Newest Products from Omron