IRF7769L1TRPBF
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Specification
高度 | 0.74 mm |
Id-连续漏极电流 | 124 A |
Qg-栅极电荷 | 200 nC |
封装 | MG-WDSON-11 |
长度 | 9.15 mm |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 100 V |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 125 W |
宽度 | 7.1 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 2.8 mOhms |
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