IRF7779L2TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-L8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 67 A |
Rds On - Drain-Source On-Resistance | 9 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 97 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single Octal Source Hex Drain |
Channel mode | Enhancement |
Fall time | 12 ns |
Height | 0.74 mm |
Length | 9.15 mm |
Pd - Power Dissipation | 125 W |
Rise Time | 19 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 36 ns |
Typical turn-on delay time | 16 ns |
Width | 7.1 mm |
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