IRF7820TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 3.7 A |
Rds On - Drain-Source On-Resistance | 78 mOhms |
Qg - gate charge | 28 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 12 ns |
Forward transconductance - minimum | 5 S |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2.5 W |
Rise Time | 3.2 ns |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 14 ns |
Width | 3.9 mm |
Unit weight | 506.600 mg |
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