IRF8113TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 16.6 A |
Rds On - Drain-Source On-Resistance | 7.4 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 24 nC |
Configuration | Single |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2.5 W |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Width | 3.9 mm |
Unit weight | 540 mg |
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