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IRF8707GTRPBF
Manufacturer:
Mfr. Part #:
IRF8707GTRPBF
Allchips #:
R001-IRF8707GTRPBF-1-H-0000-X-Y
Description:
MOSFET N-CH 30V 11A 8-SOIC
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SO-8 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - continuous drain current | 11 A |
| Rds On - Drain-Source On-Resistance | 14.2 mOhms |
| Vgs th - gate-source threshold voltage | 1.8 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 6.2 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Fall time | 4.4 ns |
| Forward transconductance - minimum | 25 S |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 7.9 ns |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 7.3 ns |
| Typical turn-on delay time | 6.7 ns |
| Width | 3.9 mm |
| Unit weight | 506.600 mg |
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