IRF9389TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 6.8 A, 4.6 A |
Rds On - Drain-Source On-Resistance | 22 mOhms, 51 mOhms |
Vgs th - gate-source threshold voltage | 1.3 V, - 1.3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 6.8 nC, 8.1 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Fall time | 3.9 ns, 15 ns |
Forward transconductance - minimum | 8.2 S, 4.1 S |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2 W |
Rise Time | 4.8 ns, 14 ns |
Series | IRF939 |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel, 1 P-Channel |
Typical shutdown delay time | 4.9 ns, 17 ns |
Typical turn-on delay time | 5.1 ns, 8 ns |
Width | 3.9 mm |
Unit weight | 506.600 mg |
IRF9389TRPBF Documents
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