IRF9Z34NPBF
In stock
- IRF9Z34NPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 55 V |
Id - continuous drain current | - 17 A |
Rds On - Drain-Source On-Resistance | 100 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 23.3 nC |
Configuration | Single |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 56 W |
Factory packing quantity | 50 |
Transistor type | 1 P-Channel |
Width | 4.4 mm |
Unit weight | 6 g |
IRF9Z34NPBF Documents
Download datasheets and manufacturer documentation for IRF9Z34NPBF
Datasheets
Others include "IRF9Z34NPBF" parts
The following parts include 'IRF9Z34NPBF'
IRF9Z34NPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF9Z34NPBF
Infineon
Trans MOSFET P-CH Si 55V 19A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
IRF9Z34NPBF
Infineon
P沟道 -55V -19A
Learn More >
-
-
-
IRF9Z34NPBF
Infineon
P沟道 -55V -19A
Learn More >
-
- View All Newest Products from Omron