IRFB4110PBF
In stock
- IRFB4110PBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 180 A |
Rds On - Drain-Source On-Resistance | 3.7 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 150 nC |
Configuration | Single |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 370 W |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Width | 4.4 mm |
Unit weight | 6 g |
Others include "IRFB4110PBF" parts
The following parts include 'IRFB4110PBF'
IRFB4110PBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFB4110PBF
Infineon
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
IRFB4110PBF
Infineon
N沟道,100V,180A,4.5mΩ@10V
Learn More >
-
-
-
IRFB4110PBF
Infineon
N沟道,100V,180A,4.5mΩ@10V
Learn More >
-
-
-
IRFB4110PBF
Infineon
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
IRFB4110PBF
Infineon
N沟道,100V,180A,4.5mΩ@10V
Learn More >
-
-
-
IRFB4110PBF.
Infineon
Learn More >
-
-
-
IRFB4110PBFXKMA1
Infineon
Learn More >
-
- View All Newest Products from Omron