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IRFB41N15DPBF
Manufacturer:
Mfr. Part #:
IRFB41N15DPBF
Allchips #:
R001-IRFB41N15DPBF-1-H-15+-X-N
Description:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Id - continuous drain current | 41 A |
| Rds On - Drain-Source On-Resistance | 45 mOhms |
| Vgs th - gate-source threshold voltage | 5.5 V |
| Vgs - gate-source voltage | 30 V |
| Qg - gate charge | 72 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 14 ns |
| Forward transconductance - minimum | 18 S |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 200 W |
| Rise Time | 63 ns |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Types | HEXFET Power MOSFET |
| Typical shutdown delay time | 25 ns |
| Typical turn-on delay time | 16 ns |
| Width | 4.4 mm |
| Unit weight | 6 g |
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