IRFB7734PBF
In stock
- IRFB7734PBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 75 V |
Id - continuous drain current | 183 A |
Rds On - Drain-Source On-Resistance | 3.5 mOhms |
Vgs th - gate-source threshold voltage | 3.7 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 180 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 100 ns |
Forward transconductance - minimum | 250 S |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 290 W |
Rise Time | 123 ns |
Factory packing quantity | 50 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 124 ns |
Typical turn-on delay time | 20 ns |
Width | 4.4 mm |
Unit weight | 6 g |
Others include "IRFB7734PBF" parts
The following parts include 'IRFB7734PBF'
IRFB7734PBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFB7734PBF
Infineon
Learn More >
-
-
-
IRFB7734PBF
Infineon
Trans MOSFET N-CH 75V 183A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
- View All Newest Products from Omron