IRFH4255DTRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V, 25 V |
Id - continuous drain current | 30 A, 30 A |
Rds On - Drain-Source On-Resistance | 4.6 mOhms, 2.1 mOhms |
Vgs th - gate-source threshold voltage | 1.1 V, 1.1 V |
Vgs - gate-source voltage | 20 V, 20 V |
Qg - gate charge | 10 nC, 23 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 15 ns, 26 ns |
Forward transconductance - minimum | 131 S, 182 S |
Height | 0.9 mm |
Length | 6 mm |
Pd - Power Dissipation | 31 W, 38 W |
Rise Time | 61 ns, 43 ns |
Factory packing quantity | 4000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 13 ns, 27 ns |
Typical turn-on delay time | 10 ns, 10 ns |
Width | 5 mm |
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