IRFH8202TRPBF
Manufacturer:
Mfr. Part #:
IRFH8202TRPBF
Allchips #:
R001-IRFH8202TRPBF-1-H-0000-X-Y
Description:
N沟道,25V,100A,1.05mΩ@10V
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 1.05 mOhms |
Vgs th - gate-source threshold voltage | 2.35 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 52 nC |
Configuration | Single |
Fall time | 19 ns |
Forward transconductance - minimum | 181 S |
Height | 0.83 mm |
Length | 6 mm |
Pd - Power Dissipation | 160 W |
Rise Time | 46 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 30 ns |
Typical turn-on delay time | 28 ns |
Width | 5 mm |
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