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IRFH8311TRPBF
Manufacturer:
Mfr. Part #:
IRFH8311TRPBF
Allchips #:
R001-IRFH8311TRPBF-1-H-0000-X-N
Description:
N沟道,30V,32A,2.1mΩ@10V
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | PQFN-8 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - continuous drain current | 80 A |
| Rds On - Drain-Source On-Resistance | 2.1 mOhms |
| Vgs th - gate-source threshold voltage | 1.35 V to 2.35 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 30 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single Quad Drain Triple Source |
| Channel mode | Enhancement |
| Fall time | 12 ns |
| Forward transconductance - minimum | 83 S |
| Height | 0.83 mm |
| Length | 6 mm |
| Pd - Power Dissipation | 3.6 W |
| Rise Time | 26 ns |
| Factory packing quantity | 4000 |
| Transistor type | 1 N-Channel |
| Types | HEXFET Power MOSFET |
| Typical shutdown delay time | 21 ns |
| Typical turn-on delay time | 21 ns |
| Width | 5 mm |
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N沟道,30V,32A,2.1mΩ@10V
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