IRFHM9331TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 11 A |
Rds On - Drain-Source On-Resistance | 11.7 mOhms |
Vgs th - gate-source threshold voltage | - 1.8 V |
Vgs - gate-source voltage | 25 V |
Qg - gate charge | 16 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Triple Source |
Channel mode | Enhancement |
Fall time | 60 ns |
Forward transconductance - minimum | 16 S |
Height | 1 mm |
Length | 3 mm |
Pd - Power Dissipation | 2.8 W |
Rise Time | 27 ns |
Factory packing quantity | 4000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 72 ns |
Typical turn-on delay time | 11 ns |
Width | 3 mm |
Unit weight | 25.050 mg |
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