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IRFHS8342TRPBF
Manufacturer:
Mfr. Part #:
IRFHS8342TRPBF
Allchips #:
R001-IRFHS8342TRPBF-1-H-0000-X-Y
Description:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | PQFN-6 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - continuous drain current | 19 A |
| Rds On - Drain-Source On-Resistance | 25 mOhms |
| Vgs th - gate-source threshold voltage | 1.35 V to 2.35 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 4.2 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single Quad Drain Dual Source |
| Channel mode | Enhancement |
| Fall time | 5 ns |
| Forward transconductance - minimum | 18 S |
| Height | 0.9 mm |
| Length | 2 mm |
| Pd - Power Dissipation | 2.1 W |
| Rise Time | 15 ns |
| Factory packing quantity | 4000 |
| Transistor type | 1 N-Channel |
| Types | HEXFET Power MOSFET |
| Typical shutdown delay time | 5.2 ns |
| Typical turn-on delay time | 5.9 ns |
| Width | 2 mm |
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