IRFL024ZTRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-4 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 5.1 A |
Rds On - Drain-Source On-Resistance | 57.5 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Qg - gate charge | 14 nC |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 23 ns |
Forward transconductance - minimum | 6.2 S |
Height | 1.6 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 2.8 W |
Rise Time | 21 ns |
Transistor type | 1 N-Channel |
Width | 3.5 mm |
Unit weight | 112 mg |
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