IRFP4868PBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 300 V |
Id - continuous drain current | 70 A |
Rds On - Drain-Source On-Resistance | 32 mOhms |
Vgs th - gate-source threshold voltage | 5 V |
Qg - gate charge | 270 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Channel mode | Enhancement |
Fall time | 45 ns |
Forward transconductance - minimum | 80 S |
Height | 20.7 mm |
Length | 15.87 mm |
Pd - Power Dissipation | 517 W |
Rise Time | 16 ns |
Typical shutdown delay time | 62 ns |
Typical turn-on delay time | 24 ns |
Width | 5.31 mm |
Unit weight | 38 g |
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