IRFPS3815PBF
Manufacturer:
Mfr. Part #:
IRFPS3815PBF
Allchips #:
R001-IRFPS3815PBF-1-H-0000-X-Y
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 105 A |
Rds On - Drain-Source On-Resistance | 15 mOhms |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 260 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 60 ns |
Height | 20.7 mm |
Length | 15.87 mm |
Pd - Power Dissipation | 441 W |
Rise Time | 130 ns |
Factory packing quantity | 25 |
Transistor type | 1 N-Channel |
Types | HEXFET Power MOSFET |
Typical shutdown delay time | 51 ns |
Typical turn-on delay time | 22 ns |
Width | 5.31 mm |
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