IRFR3607TRPBF
In stock
- IRFR3607TRPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 75 V |
Id - continuous drain current | 80 A |
Rds On - Drain-Source On-Resistance | 7.34 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 56 nC |
Configuration | Single |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 140 W |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Width | 6.22 mm |
Unit weight | 4 g |
Others include "IRFR3607TRPBF" parts
The following parts include 'IRFR3607TRPBF'
IRFR3607TRPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFR3607TRPBF
Infineon
Trans MOSFET N-CH Si 75V 80A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IRFR3607TRPBF
Infineon
N沟道,75V,80A,9mΩ@10V
Learn More >
-
-
-
IRFR3607TRPBF
Infineon
N沟道,75V,80A,9mΩ@10V
Learn More >
-
-
-
IRFR3607TRPBF
Infineon
N沟道,75V,80A,9mΩ@10V
Learn More >
-
-
-
IRFR3607TRPBF
Infineon
N沟道,75V,80A,9mΩ@10V
Learn More >
-
-
-
IRFR3607TRPBF
Infineon
N沟道,75V,80A,9mΩ@10V
Learn More >
-
-
-
IRFR3607TRPBF
Infineon
N沟道,75V,80A,9mΩ@10V
Learn More >
-
- View All Newest Products from Omron