IRFR3710ZTRLPBF
In stock
- IRFR3710ZTRLPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 3.1 A |
Rds On - Drain-Source On-Resistance | 18 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 69 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 42 ns |
Forward transconductance - minimum | 39 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 140 W |
Rise Time | 43 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 53 ns |
Typical turn-on delay time | 14 ns |
Width | 6.22 mm |
Unit weight | 4 g |
IRFR3710ZTRLPBF Documents
Download datasheets and manufacturer documentation for IRFR3710ZTRLPBF
Datasheets
Others include "IRFR3710ZTRLPBF" parts
The following parts include 'IRFR3710ZTRLPBF'
IRFR3710ZTRLPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFR3710ZTRLPBF
Analog Devices Inc
Learn More >
-
-
-
IRFR3710ZTRLPBF
Infineon
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IRFR3710ZTRLPBF
Infineon
N沟道 100V 42A
Learn More >
-
-
-
IRFR3710ZTRLPBF
Infineon
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
IRFR3710ZTRLPBF
Infineon
N沟道 100V 42A
Learn More >
-
- View All Newest Products from Omron