IRFR3710ZTRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 56 A |
Rds On - Drain-Source On-Resistance | 18 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Qg - gate charge | 100 nC |
The maximum working temperature | + 175 C |
Configuration | Single |
Fall time | 42 ns |
Forward transconductance - minimum | 39 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 140 W |
Rise Time | 43 ns |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Width | 6.22 mm |
Unit weight | 4 g |
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