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IRFR3711ZTRPBF
Manufacturer:
Mfr. Part #:
IRFR3711ZTRPBF
Allchips #:
R001-IRFR3711ZTRPBF-1-H-2022/06/09-X-Y
Description:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-252-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - continuous drain current | 93 A |
| Rds On - Drain-Source On-Resistance | 5.7 mOhms |
| Vgs th - gate-source threshold voltage | 1.55 V to 2.45 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 18 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 5.2 ns |
| Forward transconductance - minimum | 48 S |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Pd - Power Dissipation | 79 W |
| Rise Time | 13 ns |
| Factory packing quantity | 2000 |
| Transistor type | 1 N-Channel |
| Types | HEXFET Power MOSFET |
| Typical shutdown delay time | 15 ns |
| Typical turn-on delay time | 12 ns |
| Width | 6.22 mm |
| Unit weight | 4 g |
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