IRFSL3206PBF
In stock
- IRFSL3206PBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-262-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 210 A |
Rds On - Drain-Source On-Resistance | 2.4 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 120 nC |
Configuration | Single |
Height | 9.45 mm |
Length | 10.2 mm |
Pd - Power Dissipation | 300 W |
Factory packing quantity | 50 |
Transistor type | 1 N-Channel |
Width | 4.5 mm |
Unit weight | 2.387 g |
Others include "IRFSL3206PBF" parts
The following parts include 'IRFSL3206PBF'
IRFSL3206PBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFSL3206PBF
Infineon
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-262 Tube
Learn More >
-
- View All Newest Products from Omron