IRFSL7537PBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-262-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 173 A |
Rds On - Drain-Source On-Resistance | 3.3 mOhms |
Vgs th - gate-source threshold voltage | 3.7 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 210 nC |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 84 ns |
Forward transconductance - minimum | 190 S |
Height | 9.45 mm |
Length | 10.2 mm |
Pd - Power Dissipation | 230 W |
Rise Time | 105 ns |
Factory packing quantity | 50 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 82 ns |
Typical turn-on delay time | 15 ns |
Width | 4.5 mm |
Unit weight | 2.084 g |
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