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IRFSL7730PBF
Manufacturer:
Mfr. Part #:
IRFSL7730PBF
Allchips #:
R001-IRFSL7730PBF-1-H-1401-X-N
Description:
IRFSL7730PBF
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-262-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Id - continuous drain current | 246 A |
| Rds On - Drain-Source On-Resistance | 2.6 mOhms |
| Vgs th - gate-source threshold voltage | 3.7 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 271 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 115 ns |
| Forward transconductance - minimum | 249 S |
| Height | 9.45 mm |
| Length | 10.2 mm |
| Pd - Power Dissipation | 375 W |
| Rise Time | 120 ns |
| Factory packing quantity | 50 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 180 ns |
| Typical turn-on delay time | 21 ns |
| Width | 4.5 mm |
| Unit weight | 2.084 g |
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