IRFU3410PBF
In stock
- IRFU3410PBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-251-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 31 A |
Rds On - Drain-Source On-Resistance | 39 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 37 nC |
Configuration | Single |
Height | 6.22 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 110 W |
Factory packing quantity | 75 |
Transistor type | 1 N-Channel |
Width | 2.38 mm |
Unit weight | 4 g |
Others include "IRFU3410PBF" parts
The following parts include 'IRFU3410PBF'
IRFU3410PBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFU3410PBF
Infineon
通孔 N 通道 100V 31A(Tc) 3W(Ta),110W(Tc) IPAK(TO-251)
Learn More >
-
-
-
IRFU3410PBF
Infineon
通孔 N 通道 100V 31A(Tc) 3W(Ta),110W(Tc) IPAK(TO-251)
Learn More >
-
-
-
IRFU3410PBF
Infineon
通孔 N 通道 100V 31A(Tc) 3W(Ta),110W(Tc) IPAK(TO-251)
Learn More >
-
- View All Newest Products from Omron