IRFZ44NLPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-262-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 49 A |
Rds On - Drain-Source On-Resistance | 17.5 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 42 nC |
Configuration | Single |
Height | 9.45 mm |
Length | 10.2 mm |
Pd - Power Dissipation | 110 W |
Factory packing quantity | 50 |
Transistor type | 1 N-Channel |
Width | 4.5 mm |
Unit weight | 2.387 g |
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