IRG4PF50WDPBF
Manufacturer:
Mfr. Part #:
IRG4PF50WDPBF
Allchips #:
R001-IRG4PF50WDPBF-1-H-14+-X-Y
Description:
N沟道,Vces=900V,Ic=28A,Vce(on)=2.25V
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IRG4PF50WDPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IRG4PF50WDPBF is available at Allchips.100% original and new guarantee. If
comprehensive data for IRG4PF50WDPBF to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 900 V |
Collector - emitter saturation voltage | 2.25 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 51 A |
Pd - Power Dissipation | 200 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Collector maximum continuous current Ic | 51 A |
Gate-emitter leakage current | 100 nA |
Height | 20.7 mm (Max) |
Length | 15.87 mm (Max) |
Factory packing quantity | 25 |
Width | 5.31 mm (Max) |
Unit weight | 38 g |
Others include "IRG4PF50WDPBF" parts
The following parts include 'IRG4PF50WDPBF'
IRG4PF50WDPBF Releted Information
- Hot sale
- Related Categories
- Popular Search