IRGP35B60PDPBF
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Specification
RoHS | yes |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.85 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 60 A |
Pd - Power Dissipation | 308 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Collector maximum continuous current Ic | 60 A |
Gate-emitter leakage current | 100 nA |
Height | 20.7 mm (Max) |
Length | 15.87 mm (Max) |
Factory packing quantity | 25 |
Technology | Si |
Width | 5.31 mm (Max) |
Unit weight | 38 g |
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IRGP35B60PDPBF
Infineon
N沟道,Vce=600V,Ic=60A,Vce(on)=1.85V
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