IRGS4610DPBF
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Specification
封装 | TO-263-3 |
晶体管极性 | 分立半导体产品,晶体管-UGBT,MOSFET-单 |
Vds-漏源极击穿电压 | 600V |
Pd-功率耗散 | 77W |
安装方式 | 表面贴装 |
Vgs - 栅极-源极电压 | 27ns/75ns |
工作温度范围 | -40°C~175°C(TJ) |
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