IRL100HS121
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Specification
Qg-栅极电荷 | 3.7 nC |
封装 | PQFN-6 |
Vds-漏源极击穿电压 | 100 V |
工作温度范围 | - 55 C~+ 175 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 11.5 W |
Vgs - 栅极-源极电压 | 10 V |
Id-连续漏极电流 | 5.1 A |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 34 mOhms |
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