IRL7472L1TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-L8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 564 A |
Rds On - Drain-Source On-Resistance | 970 uOhms |
Vgs th - gate-source threshold voltage | 1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 220 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 137 ns |
Forward transconductance - minimum | 232 S |
Height | 0.74 mm |
Length | 9.15 mm |
Pd - Power Dissipation | 341 W |
Rise Time | 176 ns |
Factory packing quantity | 4000 |
Typical shutdown delay time | 174 ns |
Typical turn-on delay time | 68 ns |
Width | 7.1 mm |
Unit weight | 176.520 mg |
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