IRLHM620TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PQFN-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 40 A |
Rds On - Drain-Source On-Resistance | 2.5 mOhms |
Vgs th - gate-source threshold voltage | 0.5 V to 1.1 V |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 52 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Triple Source |
Channel mode | Enhancement |
Fall time | 37 ns |
Forward transconductance - minimum | 58 S |
Height | 1.05 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 37 W |
Rise Time | 25 ns |
Factory packing quantity | 4000 |
Transistor type | 1 N-Channel |
Types | HEXFET Power MOSFET |
Typical shutdown delay time | 57 ns |
Typical turn-on delay time | 7.5 ns |
Width | 3.3 mm |
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